Publication
Surface Science
Paper

Pressure dependence of oxide growth rate on silicon and metal silicides

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Abstract

Si 2p photoemission was used to determine the relative oxidation rates for Si(111), Ru2Si3 and CoSi2. Samples were thermally oxidized at 750°C with oxygen pressures varying from 1 × 10-1 to 1 Torr. The results confirm that CoSi2 and Ru2Si3 oxidize faster than Si(111) at "hight" pressures, but reveal the surprising feature that the growth of SiO2 is faster on Si at pressures below 1 × 10-4 Torr. © 1991.

Date

02 Feb 1991

Publication

Surface Science