Post Si CMOS graphene nanoelectronics

Abstract

IBM graphene FETs (GFET) yield the highest cut-off frequency (f T) values reported: 200 GHz on epitaxially grown SiC wafer and 150 GHz1 on CVD-grown-transferred onto Si wafer which are well above Si MOSFET fT-Lg trend in ITRS2. A novel reconfigurable graphene p-n junction based logic device is also introduced. Its switching is accomplished by using co-planar split gates that modulate the properties that are unique to graphene including angular dependent carrier reflection which can dynamically change the device operation, leading to reconfigurable multi-functional logic. © 2011 IEEE.