Publication
Applied Physics Letters
Paper

Polysilicon recrystallization by CO2 laser heating of SiO 2

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Abstract

CO2 laser emission matches the absorption of optical phonons in SiO2. This fact was used to couple the laser energy into a layer of SiO2 (510 nm) deposited over polysilicon (225 nm), which was deposited on thermally grown SiO2 (860 nm). In this manner, recrystallization of the polysilicon was achieved with a mosaic pattern of grains having sizes in the 1-30-μm range.

Date

01 Dec 1981

Publication

Applied Physics Letters

Authors

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