Plasma immersion ion implantation as an alternative doping technology for ULSI

Abstract

Plasma immersion ion implantation (PIII) has much attracted attention as a promising and innovatory doping technology for silicon (Si) processing of ultra-large-scale-integrated circuits (ULSI). In this article, we review and demonstrate the most attractive application areas of PIII for the development of advanced devices. PIII not only shows its unique characteristics for each application area, but also improves device performances very remarkably.