Plasma annealing state of semiconductors; plasma condensation to a superconductivity- like state at 1000 K?

Abstract

The high reflectivity, fluid "plasma annealing" phase of semiconductors, particularly Si, subjected to short, intense pulses of laser or electron or ion beam irradiation is known to exhibit a combination of properties for which no adequate explanation has previously been given. These include an almost crystalline Raman spectrum, a lattice temperature that is an extremely non-linear function of absorbed energy density, an optical band gap with no detectable free carrier absorption, a flat absorption spectrum above the gap. We propose a bose condensation of the carriers excited by the irradiation into a state having properties similar to those of a superconductor to explain these anomalies. © 1981.