Publication
Applied Physics Letters
Paper

Picosecond laser-induced melting and resolidification morphology on Si

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Abstract

Ultrafast melting and resolidification on the surface of a silicon crystal has been induced by picosecond laser pulses at 532 and 266 nm. Optical microscopy and electron diffraction revealed the formation of amorphous silicon. Details of surface morphology are sensitive functions of pulse intensity, energy, wavelength, and crystallographic orientation.

Date

07 Aug 2008

Publication

Applied Physics Letters

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