Ronald Troutman
Synthetic Metals
We propose a simple, noninvasive, optical technique to measure intra-wafer and intra-chip MOSFET performance variations. Technique utilizes correlation between device performance and weak near-infrared emission from its off-state current. It maps performance variations, producing quantitative data. We experimentally demonstrate our technique on 130 nm SOI microprocessor. © 2005 Elsevier Ltd. All rights reserved.
Ronald Troutman
Synthetic Metals
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
J.H. Stathis, R. Bolam, et al.
INFOS 2005
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990