S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
A simple phenomenological model of the electronic structure of the pseudogap of an amorphous semiconductor is considered, and used as the starting point for a systematic investigation of the processes that determine the nature of the photoluminescence. Many of the most striking features of these materials are shown to derive in a straightforward manner from the nature of the primary luminescing entity, a "trapped exciton" in which the hole is trapped in a localized gap state and the electron is bound to the hole by their mutual Coulomb attraction. Other important properties of the photoluminescence reflect the dynamics of the hopping motion of a charged carrier through a band of localized states. © 1982 The American Physical Society.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Mark W. Dowley
Solid State Communications
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989