About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Non-Crystalline Solids
Paper
Photoluminescence and electron spin resonance in nitrogen-rich amorphous silicon nitride
Abstract
Electron spin resonance (ESR) and photoluminescence (PL) measurements have been employed to investigate some electronically important defects in nitrogen-rich amorphous silicon nitride films (a-SiNx:H where x > 1.3) prepared using plasma-enhanced chemical vapor deposition. The PL intensity decreases with time (fatigues) when excited with UV light. This fatigued PL can be restored (bleached) with the application of visible light. There exists an ESR signal in as-deposited films of a-SiNx:H which is temperature dependent. This ESR signal can be increased by irradiation with UV light, and the increased ESR signal can be bleached by application of visible light. Microscopic models for the defects responsible for these effects are discussed. © 1995.