Kenneth T. Nicholson, Kangzhan Zhang, et al.
Langmuir
Hydrogenation of the silicon/silicon oxide interface is shown to cause changes in every feature spectroscopically discernible by soft x-ray photoemission in addition to depinning the Fermi level. A new feature is observed to grow in at 3.6 eV with respect to bulk Si upon exposure to atomic hydrogen at the expense of interface states intermediate between 3.6 and 0 eV. Assignments of photoemission features are discussed in the context of previous model studies of the interface and issues of electronic versus chemical reversibility are discussed. © 1996 American Institute of Physics.
Kenneth T. Nicholson, Kangzhan Zhang, et al.
Langmuir
K.Z. Zhang, Leah M. Meeuwenberg, et al.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Mark M. Banaszak Holl, F. Read McFeely
Physical Review Letters
K.Z. Zhang, J.N. Greeley, et al.
Journal of Applied Physics