Physical Review Letters

Paper

29 Jun 1987

Pantelides responds [2]

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Abstract

No abstract available.

Paper

Scattering-theoretic method for defects in semiconductors. I. Tight-binding description of vacancies in Si, Ge, and GaAs

J. Bernholc, Sokrates T. Pantelides

Physical Review B

Conference paper

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, et al.

ECS Meeting 2009

Paper

Point defects in crystalline silicon, their migration and their relation to the amorphous phase

Dimitris Maroudas, Sokrates T. Pantelides

Chemical Engineering Science

Paper

Oscillator strengths in tetrahedral semiconductors

Walter A. Harrison, Sokrates T. Pantelides

Physical Review B

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