Solid State Communications

Paper

01 Jan 1991

Oxygen interaction with defects at the Si/SiO₂ interface

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Abstract

Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. © 1991.

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