Publication
Solid State Communications
Paper

Oxygen interaction with defects at the Si/SiO2 interface

View publication

Abstract

Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. © 1991.

Date

01 Jan 1991

Publication

Solid State Communications

Authors

Topics

Share