I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Paper
Oxygen interaction with defects at the Si/SiO2 interface
Abstract
Using 17O-enriched thermal oxide on silicon, we have measured the hyperfine interaction between dangling bonds at the (111) interface (Pb centers) and oxygen. Our analysis shows that the Pb center interacts with a single oxygen atom in the SiO2. © 1991.
Related
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films