The DX centre
T.N. Morgan
Semiconductor Science and Technology
A study was conducted to demonstrate significant grain size and device performance improvement of the Cu(In,Ga)Se2 (CIGS)-based PV device through the intentional introduction of controlled Sb impurity doping into the CIGS layer film processing. A solution-based spin coating process was used as a deposition method to demonstrate the effect of antimony-doping on the properties of the CIGS films and the solar cell device. The approach relied on forming a soluble molecular-based metal chalcogenide precursor in hydrazine at room temperature, while device-quality CIGS films were easily attained using this process without the need for postdeposition selenization. An additional Sb 2Sb3/S solution in hydrazine was used as Sb source for each CIGS film. The phase purity of the film was also verified with X-ray diffraction.
T.N. Morgan
Semiconductor Science and Technology
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Lawrence Suchow, Norman R. Stemple
JES
Revanth Kodoru, Atanu Saha, et al.
arXiv