Optical Sampling of Ghz Charge Density Modulation in Silicon Bipolar Junction Transistors

Abstract

We report the use of optical sampling employing a gain-switched 1·3 μm semiconductor laser to observe charge density modulation in a 1·5 μm × 5μm emitter silicon BJT. The overall system bandwidth is 8 GHz. The device under test is switched at frequencies from 100 MHz to 2·5 GHz. © 1987, The Institution of Electrical Engineers. All rights reserved.