R. Sprik, I.N. Duling, et al.
Applied Physics Letters
Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency-dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.
R. Sprik, I.N. Duling, et al.
Applied Physics Letters
D. Grischkowsky, I.N. Duling Iii, et al.
Physical Review Letters
Alan C. Warren, N. Katzenellenbogen, et al.
Applied Physics Letters
Joshua E. Rothenberg, D. Grischkowsky, et al.
IQEC 1984