Publication
Applied Physics Letters
Paper

Optical and electronic properties of doped silicon from 0.1 to 2 THz

View publication

Abstract

Using a source of freely propagating subpicosecond pulses of THz radiation, we have measured the absorption and dispersion of both N- and P-type, 1 Ω cm silicon from 0.1 to 2 THz. These results give the corresponding frequency-dependent complex conductance over the widest frequency range to date. The data provide a complete view on the dynamics of both electrons and holes and are well fit by the simple Drude relationship.

Date

01 Dec 1990

Publication

Applied Physics Letters

Authors

Share