One-dimensional electron transport on the surface channel of InAs quantum wells

Abstract

Utilizing the unique feature of Fermi-level pinning at the InAs surface, one-dimensional electron transport has been achieved at the edge of confined InAs layers. At low temperatures, the transport is characterized by a much enhanced conductance with a flat temperature dependence in comparison with that in the hulk. Negative magnetoresistance, Shubnikov-dc Haas oscillations and conductance fluctuations are further manifestations of one-dimensional surface conduction. © 1992.