About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Comput. Methods Appl. Mech. Eng.
Paper
On the stability of finite difference schemes in transient semiconductor problems
Abstract
Nonlinear instabilities of explicit and half-implicit Crank-Nicholson schemes are analyzed by perturbation techniques. The time step is found to be inversely proportional to μN, a criterion which is in good agreement with experience. Based on this result, an optimal choice between the fast half-implicit method and the fully implicit Newton method is possible, favoring the former for Gunn-diodes and Schottky-barrier field-effect transistors, and the latter for insulated-gate field-effect transistors and some bipolar transistor problems. © 1973.