On the phenomenological model of preferred sputtering for SIMS and Auger profiling: A critical analysis

Abstract

Analysis of the existing model of preferred sputtering for SIMS and Auger depth profiling shows that while the model is theoretically sound, there are some inconsistencies related to time scale, sputter yield, matrix effect, etc., which arise from implicit assumptions made without due regard to their physical origin. To appreciate and thus remove these inconsistencies a generalized formulation of the model is introduced, and from it various particular cases are derived for sputtering of binary alloys and compounds. It will be shown that the model can be extended to include the ion impregnation effect, and that the model is applicable to monocrystalline targets, but has only limited usefulness for inhomogeneous compounds. © 1980.