I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Motivated by the problem of graph structure compression under realistic source models, we study the symmetry behavior of preferential and uniform attachment graphs. These are two dynamic models of network growth in which new nodes attach to a constant number m of existing ones according to some attachment scheme. We prove symmetry results for m = 1 and 2, and we conjecture that for m ≥ 3, both models yield asymmetry with high probability. We provide new empirical evidence in terms of graph defect. We also prove that vertex defects in the uniform attachment model grow at most logarithmically with graph size, then use this to prove a weak asymmetry result for all values of m in the uniform attachment model. Finally, we introduce a natural variation of the two models that incorporates preference of new nodes for nodes of a similar age, and we show that the change introduces symmetry for all values of m.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
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SCC 2006
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SPIE Photomask Technology + EUV Lithography 2009
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International Journal of Modelling, Identification and Control