PaperSchottky contacts to cleaved GaAs (110) surfaces. I. Electrical properties and microscopic theoriesA.B. McLean, R.H. WilliamsJournal of Physics C: Solid State Physics
Conference paperInterface state generation in pFETs with ultra-thin oxide and oxynitride on (100) and (110) Si substratesJ.H. Stathis, R. Bolam, et al.INFOS 2005
Conference paperNEW RELIABLE STRUCTURE FOR HIGH TEMPERATURE MEASUREMENT OF SILICON WAFERS USING A SPECIALLY ATTACHED THERMOCOUPLE.S. Cohen, T.O. Sedgwick, et al.MRS Proceedings 1983
