Publication
Applied Physics Letters
Paper

On a current instability resulting from the diffusion of hot electrons

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Abstract

An instability of the electron concentration is predicted in a semiconductor with a nearly saturating drift velocity and a diffusion constant which increases with increasing electric field. A small signal analysis shows under what conditions fluctuations of the carrier concentration will be unstable. © 1967 The American Institute of Physics.

Date

30 Nov 2004

Publication

Applied Physics Letters

Authors

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