PaperGrowth and properties of thin GaAs epitaxial layers on Al2O 3T.F. Kuech, A. Segmüller, et al.Journal of Applied Physics
PaperObservation of quantum effects in the spectrum of piezoelectrically amplified acoustic flux in GaAsD.G. Carlson, A. SegmüllerPhysical Review Letters
PaperLattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga1-xAlxAsG.S. Cargill III, A. Segmüller, et al.Physical Review B
PaperDefect formation caused by a transient decrease in the ambient oxygen concentration during growth of YBa2Cu3O 7-δ filmsA. Gupta, B.W. Hussey, et al.Applied Physics Letters
