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PaperLattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga1-xAlxAsG.S. Cargill III, A. Segmüller, et al.Physical Review B
PaperDefect formation caused by a transient decrease in the ambient oxygen concentration during growth of YBa2Cu3O 7-δ filmsA. Gupta, B.W. Hussey, et al.Applied Physics Letters