George S. Almasi, Yeong S. Lin
IEEE Transactions on Magnetics
The propagation and transfer of 1-µm bubbles via charged walls in ion-implanted contiguous-disk devices was previously reported. A novel bubble nucleator utilizing charged walls to provide a portion of the nucleation field, helping to define the spot where nucleation occurs and also reducing the required current, is described. Controlled nucleation of 1-µm bubbles and propagation away from the nucleation site have been tested in several double garnet composites with different material Q factors (2 to 4) in the storage garnet layer. Typically, using a 1-µs current pulse along a 5-µm wide conductor, the nucleation current increases from 200 mA to over 800 mA over the entire bias field range (∼15 percent) for propagation as the Q factor increases from 2 to 4. Compared to nucleators without charged wall assistance, the reduction in current level attributable to the charged wall is approximately 30–40 percent. This and other data are consistent with a model which assumes that nucleation takes place at the interface between the implanted and unimplanted layers, and that the charged wall contributes a field on the order of 0.5 × 4πM to the nucleation process. The collective operating margins for propagation (350 kHz), generation, transfer and annihilation of 1-µm bubbles along a short contiguous-disk pattern with a 4.5-µm device period are presented. © 1980 IEEE.
George S. Almasi, Yeong S. Lin
IEEE Transactions on Magnetics
George S. Almasi, Yeong S. Lin
IEEE Transactions on Magnetics
Yeong S. Lin, George S. Almasi, et al.
IEEE Transactions on Magnetics
Mitchell S. Cohen, George S. Almasi, et al.
IEEE Transactions on Magnetics