Nonmonotonic bias voltage dependence of the magnetocurrent in GaAs-based magnetic tunnel transistors

Abstract

MTTs prepared using GaAs(001) and GaAs(111) collectors were studied and found to display large magnetocurrents which vary nonmonotonically with increasing hot electron energy. The energy dependence of MC was explained by a combination of spin-dependent broadening of the electron energy distribution in the FM base layer and strong hot electron scattering at the meta/semiconductor interface.