Conference paper
Reliability projection for ultra-thin oxides at low voltage
J.H. Stathis, D.J. DiMaria
IEDM 1998
A study was conducted to show that defect generation in ultrathin oxides (≲3.0 nm) operating above 100 °C will be enhanced compared to thicker films. Assumptions of an Arrhenius-type behavior from 25 °C to 200 °C on these ultrathin oxides are not justified and will likely lead to erroneous predictions for oxide reliability.
J.H. Stathis, D.J. DiMaria
IEDM 1998
L. Dori, J.H. Stathis, et al.
Journal of Applied Physics
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IEDM 2013
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