J.H. Stathis, S. Zafar
Microelectronics Reliability
A study was conducted to show that defect generation in ultrathin oxides (≲3.0 nm) operating above 100 °C will be enhanced compared to thicker films. Assumptions of an Arrhenius-type behavior from 25 °C to 200 °C on these ultrathin oxides are not justified and will likely lead to erroneous predictions for oxide reliability.
J.H. Stathis, S. Zafar
Microelectronics Reliability
R. Rodríguez, R.V. Joshi, et al.
SISPAD 2003
M.J. Uren, K.M. Brunson, et al.
Microelectronic Engineering
S. Lombardo, F. Crupi, et al.
Annual Proceedings - Reliability Physics (Symposium)