Noise performance of a low base resistance 200 GHz SiGe technology

Abstract

Emerging applications beyond 10 GHz will demand silicon technologies capable of achieving good noise performance out to high frequencies. In this work, we characterize for the first time noise in a 200 GHz SiGe technology out to 26 GHz, demonstrating the benefits of high fT and low RB. We report 10, 20 and 26 GHz Fmin values of 0.4, 1.33 and 1.5 dB, respectively, with associated gains of 15, 11 and 9 dB. Further, we present the results of an experimental variant of the process with 31% lower RB and which further reduces Fmin by up to 0.4 dB. Our results reveal the potential of 200 GHz SiGe for low noise operation out to high frequencies.