NITROGEN ISOELECTRONIC TRAP IN GaAs.

Abstract

We report PL, PLES, and resonant PL from N isoelectronic traps induced under pressure at 5 degree K in GaAs. Exciton A and B transitions of isolated N form in the gap above 22 kbar and show strong wavevector-independent phonon cooperation resembling GaP:N. Levels vary with pressure independently of nearby band edges, thus demonstrating 'deep-level behaviour. ' These bound states derive from a localized resonance 150-180 mev above the GAMMA //1 edge.