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Publication
ICPS Physics of Semiconductors 1984
Conference paper
NITROGEN ISOELECTRONIC TRAP IN GaAs.
Abstract
We report PL, PLES, and resonant PL from N isoelectronic traps induced under pressure at 5 degree K in GaAs. Exciton A and B transitions of isolated N form in the gap above 22 kbar and show strong wavevector-independent phonon cooperation resembling GaP:N. Levels vary with pressure independently of nearby band edges, thus demonstrating 'deep-level behaviour. ' These bound states derive from a localized resonance 150-180 mev above the GAMMA //1 edge.