Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
We present a theoretical investigation and discussion of N doping in ZnSe and ZnTe, based on first-principles calculations. We find that the experimentally observed trend in doping efficiency can be attributed to the higher solubility of N in ZnTe. We also discuss the potential formation of complexes between the N acceptor and native defects, the change in lattice constant of ZnSe due to heavy N doping, and some problems associated with N as an acceptor dopant. © 1995.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS