O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
We present a theoretical investigation and discussion of N doping in ZnSe and ZnTe, based on first-principles calculations. We find that the experimentally observed trend in doping efficiency can be attributed to the higher solubility of N in ZnTe. We also discuss the potential formation of complexes between the N acceptor and native defects, the change in lattice constant of ZnSe due to heavy N doping, and some problems associated with N as an acceptor dopant. © 1995.
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Frank Stem
C R C Critical Reviews in Solid State Sciences
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science