Publication
Physical Review Letters
Paper

New transport phenomenon in a semiconductor "superlattice"

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Abstract

We report electronic transport properties in a GaAs-AlAs periodic structure known as a "superlattice" prepared by a molecular-beam epitaxy. Its differential conductance in the superlattice direction first gradually decreases, followed by a rapid drop to negative values, then, at high fields, exhibits an oscillatory behavior with respect to applied voltages. This observation is interpreted in terms of the formation and expansion of a high-field domain. The voltage period of the oscillation provides the energy of the first-excited band which is in good agreement with that predicted by the theory. © 1974 The American Physical Society.

Date

19 Aug 1974

Publication

Physical Review Letters

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