L.L. Chang, H. Sakaki, et al.
Physical Review Letters
We report electronic transport properties in a GaAs-AlAs periodic structure known as a "superlattice" prepared by a molecular-beam epitaxy. Its differential conductance in the superlattice direction first gradually decreases, followed by a rapid drop to negative values, then, at high fields, exhibits an oscillatory behavior with respect to applied voltages. This observation is interpreted in terms of the formation and expansion of a high-field domain. The voltage period of the oscillation provides the energy of the first-excited band which is in good agreement with that predicted by the theory. © 1974 The American Physical Society.
L.L. Chang, H. Sakaki, et al.
Physical Review Letters
L.L. Chang, A. Koma
Applied Physics Letters
G.A. Sai-Halasz, A. Pinczuk, et al.
Surface Science
E. Mendez, S. Washburn, et al.
ICPS Physics of Semiconductors 1984