Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Quasihydrostatic pressure resistivity experiments on a single crystal of SmS are reported up to 27.5 kbar. At low temperature, a regime change occurs at P ∼ 20 kbar, between a "quasiinsulating" behavior (P < 20 kbar) and a metallic ground state (P 20 kbar). Striking similarities appear with TmSe and TmS cases. © 1981.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Frank Stem
C R C Critical Reviews in Solid State Sciences