New interpretation of the angular-resolved photoemission measurements from cleaved silicon

Abstract

A new interpretation of a recently observed surface state using angular-resolved photoemission spectroscopy near the top of the valence band on the cleaved (111) face of Si has been provided. We are able to explain satisfactorily the observed anisotropy, dispersion and splitting of this peak by examining the electronic structure of a (2 × 1) reconstructed surface. © 1976.