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Publication
DRC 2012
Conference paper
Negative differential resistance in short-channel graphene FETs: Semianalytical model and simulations
Abstract
We discuss the phenomenon of negative output differential resistance of short-channel graphene FETs at room temperature, whose physical origin arises from a transport-mode bottleneck induced by the contact-doped graphene. We outline a simple semianalytical model, based on semiclassical ballistic transport, which captures this effect and qualitatively reproduces results from the non-equilibrium Green's function approach (NEGF). We find that this effect is robust against phonon scattering. © 2012 IEEE.