NbAlO_xNb tunnel junctions as detectors for ionizing radiation

Abstract

The applicability of NbAlOxNb tunnel junctions as detectors for ionizing radiation has been investigated using low-temperature scanning electron microscopy (LTSEM). An estimation of the different processes limiting the energy resolution of superconducting tunnel junction detectors (STJDs) is made based on the experimentally determined tunnel junction properties. The radiation hardness of NbAlOxNb tunnel junctions for the irradiation with high-energy electrons up to 30 keV has been investigated. The application of these tunnel junctions as fast switching detectors is discussed. © 1990.