PaperPattern placement accuracy in block copolymer directed self-assembly based on chemical epitaxyGregory S. Doerk, Chi-Chun Liu, et al.ACS Nano
PaperField Effect and Strongly Localized Carriers in the Metal-Insulator Transition Material VO2Koen Martens, Jaewoo Jeong, et al.Physical Review Letters
PaperGaAs on 200 mm Si wafers via thin temperature graded Ge buffers by molecular beam epitaxyM. Richter, Christophe Rossel, et al.Journal of Crystal Growth
Conference paperSputtering behavior and evolution of depth resolution upon low energy ion irradiation of GaAsMarinus Hopstaken, Dirk Pfeiffer, et al.ECS Transactions
