Arvind Ajoy, Kota V.R.M. Murali, et al.
Journal of Physics Condensed Matter
We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the [100], [110], and [111] directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in tunnel FETs and in small geometry MOSFETs and FINFETs. © 2013 American Institute of Physics.
Arvind Ajoy, Kota V.R.M. Murali, et al.
Journal of Physics Condensed Matter
M.V. Fischetti, S. Jin, et al.
Journal of Computational Electronics
Samarth Agarwal, Jeffrey B. Johnson, et al.
Journal of Computational Electronics
S.E. Laux
Physical Review B - CMMP