Publication
Journal of Applied Physics
Paper

Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

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Abstract

We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the [100], [110], and [111] directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in tunnel FETs and in small geometry MOSFETs and FINFETs. © 2013 American Institute of Physics.

Date

12 Feb 2013

Publication

Journal of Applied Physics

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