Science China Information Sciences

Paper

01 Mar 2021

Multi level cell (MLC) in 3D crosspoint phase change memory array

Paper

Investigation of the effect of oxygen partial pressure during reactive sputtering of tantalum oxide resistive random access memory switching layer

Rajas Mathkari, Maximilian Liehr, et al.

Materials Science in Semiconductor Processing

Paper

Signal and noise extraction from analog memory elements for neuromorphic computing

Nanbo Gong, T. Idé, et al.

Nature Communications

Conference paper

A no-verification Multi-Level-Cell (MLC) operation in Cross-Point OTS-PCM

Nanbo Gong, W. Chien, et al.

VLSI Technology 2020

Conference paper

Mushroom-Type phase change memory with projection liner: An array-level demonstration of conductance drift and noise mitigation

Robert L. Bruce, Syed Ghazi Sarwat, et al.

IRPS 2021

View all publications