Publication
IRPS 2014
Conference paper

Modeling of transient and static components of intrinsic emission from VLSI circuits

View publication

Abstract

This work presents a study of the effect of electrical parameters, such as signal frequency and switching activity, on the intensity of transient and static emission components in time-integrated emission images acquired from VLSI circuits. Time-integrated and time-resolved emission data were acquired from a 32 nm SOI test chip at different operating conditions to weight and separate the transient and static components of circuit spontaneous emission. A novel model to explain the experimental data is also proposed. © 2014 IEEE.

Date

Publication

IRPS 2014

Authors

Share