Modeling of energy distributions for plasma implantation

Abstract

Plasma immersion ion implantation (PIII) has significant advantages over conventional implantation in high dose and low energy implant applications. One potential drawback is the poly-energetic nature of pulsed PIII implantation. The contribution of low energy ions to the total implant dose has been computed for pulsed PIII. An analytical approach allows the extraction of the scaling of the dose of the low energy with the implant parameters. The developed models allow the engineering of the rise times, fall times, total pulse time, pulsing frequency, and plasma ion density to minimize the implant energy spread, while maximizing the dose rate.