Microlithography 2004
Conference paper

Modeling for profile-based process-window metrology

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We formulate a physical model to extract effective dose and defocus (EDO) from pattern profile data and demonstrate its efficacy in the analysis of in-line scatterometer measurements. From the measurement of a single target structure, the model enables simultaneous computation of pattern dimensions pre-calibrated to the imaging system dose and focus settings. Our approach is generally applicable to ensuring the adherence of pattern features to dimensional tolerances in the control and disposition of product wafers while minimizing in-line metrology.