Modeling and parameter extraction of amorphous silicon thin-film-transistors for active-matrix liquid-crystal displays

Abstract

An analytical model for the series resistors is derived based on two-dimensional current flow in the source/drain regions. This model accounts for effects of band-tail states on channel conduction, finite overlap of the gate to source and drain, and combined contact resistivity of the intrinsic and n+ a-Si films. Coupling this model with a consistent model for the intrinsic TFT (thin-film transistor) yields a complete description of the staggered TFT at low drain-to-source voltage, and this model has been used to extract key device parameters for a-Si TFTs.