Metal-metal epitaxy on silicon near room temperature: rhodium and iridium

Abstract

Rhodium and iridium films with controlled orientations have been grown at room temperature using the technique of metal-metal epitaxy on silicon (MMES) developed recently, Cu films, epitaxially deposited on Si(100) and Si(111), are used as seed layers for the deposition of Rh and Ir films. The (100) and (111) films of Rh and Ir thus grown allow in situ surface studies with extensive preparation procedures. The same technique has allowed the growth of a number of other metals with controlled orientations, including (100) films of both face-centered cubic and body-centered cubic metals. © 1990.