E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
We have used x-ray photoelectron spectroscopy and multiple internal reflection infrared spectroscopy to study the etching of polysiloxane films in an rf oxygen plasma. The results indicate that a structurally strained SiO 2 layer, ∼1 nm thick, is formed on the film exposed to oxygen plasma. For a given rf power input this oxidized overlayer recedes with the etching front in a steady state fashion, acting as a protective layer for the underlying polysiloxane film. The etching mechanism is effectively a combination of two competitive processes, namely, ion sputtering and oxidation.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
J. Liutkus, M. Hatzakis, et al.
Polymer Engineering & Science
R.D. Goldblatt, L. Ferreiro, et al.
Journal of Applied Polymer Science
D.Y. Shih, J. Paraszczak, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films