Publication
Applied Physics A Solids and Surfaces
Paper

Measurement of the interfacial energy between amorphous Si and crystalline Si

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Abstract

The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110. © 1991 Springer-Verlag.

Date

01 Jul 1991

Publication

Applied Physics A Solids and Surfaces

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