Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
The experimental data of crystallization of amorphous Si thin films on single crystal Si substrates and on inert substrates have been analysed by a kinetic model of phase transformation. On the basis of the analysis, the interfacial energy between amorphous Si and crystalline Si has been calculated to be about 0.30 eV/atom and the number of Si atoms in the critical nucleus to be about 110. © 1991 Springer-Verlag.
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
John G. Long, Peter C. Searson, et al.
JES
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997