Magnetic tunnel-valve barriers with boron

Abstract

The properties of magnetic tunnel junctions with aluminum oxide barriers alloyed with boron were presented. It was also investigated if the deposition of amorphous AlB prior to oxidation resulted in a variation of tunnel valve properties. Analysis showed that the microstructure of the metal film used to form the Al2O3-based amorphous oxide barrier does not appear to play a significant role in the integrity and low-resistance behavior of the resulting tunnel-valve sensor.