P. Alnot, D.J. Auerbach, et al.
Surface Science
The use of In2Se3 as a semiconductor for the low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor was discussed. The hydrazinium precursor was isolated in bulk form to avoid hydrazine use during film deposition. Thin-film transistors (TFT) based on the spin-coated chalcogenide films was fabricated employing a relatively thin (250 Å) thermal SiO3 gate insulator and co-evporated gold/indium contacts. It was found that at low drain voltage, the TFT demonstrates typical transistor-like behavior, as drain current increases linearly with drain voltage.
P. Alnot, D.J. Auerbach, et al.
Surface Science
A. Reisman, M. Berkenblit, et al.
JES
K.N. Tu
Materials Science and Engineering: A
Michiel Sprik
Journal of Physics Condensed Matter