Low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor

Abstract

The use of In2Se3 as a semiconductor for the low-voltage transistor employing a high-mobility spin-coated chalcogenide semiconductor was discussed. The hydrazinium precursor was isolated in bulk form to avoid hydrazine use during film deposition. Thin-film transistors (TFT) based on the spin-coated chalcogenide films was fabricated employing a relatively thin (250 Å) thermal SiO3 gate insulator and co-evporated gold/indium contacts. It was found that at low drain voltage, the TFT demonstrates typical transistor-like behavior, as drain current increases linearly with drain voltage.