Low-voltage, high-mobility pentacene transistors with solution-processed high dielectric constant insulators

Abstract

The gate voltage dependence of mobility in pentacene insulated-gate field-effect transistors (IGFET) was investigated. A relatively high dielectric constant barium strontium titanate film was employed as the gate insulator. The operation of the pentacene IGFETs was modeled by standard field effect transistor equations. Typical p-type characteristics were observed, which corresponds to a gate sweep in the saturation regime of operation of an IGFET with channel length L = 4.4 μm and width W = 1500 μm.