Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
The gate voltage dependence of mobility in pentacene insulated-gate field-effect transistors (IGFET) was investigated. A relatively high dielectric constant barium strontium titanate film was employed as the gate insulator. The operation of the pentacene IGFETs was modeled by standard field effect transistor equations. Typical p-type characteristics were observed, which corresponds to a gate sweep in the saturation regime of operation of an IGFET with channel length L = 4.4 μm and width W = 1500 μm.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
O.F. Schirmer, K.W. Blazey, et al.
Physical Review B
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering