Frank Stem
C R C Critical Reviews in Solid State Sciences
The gate voltage dependence of mobility in pentacene insulated-gate field-effect transistors (IGFET) was investigated. A relatively high dielectric constant barium strontium titanate film was employed as the gate insulator. The operation of the pentacene IGFETs was modeled by standard field effect transistor equations. Typical p-type characteristics were observed, which corresponds to a gate sweep in the saturation regime of operation of an IGFET with channel length L = 4.4 μm and width W = 1500 μm.
Frank Stem
C R C Critical Reviews in Solid State Sciences
Imran Nasim, Melanie Weber
SCML 2024
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications