M. Arafa, P. Fay, et al.
Electronics Letters
This paper is an overview of work at the IBM Thomas J. Watson Research Center on the chemical and physical considerations underlying the development of a lowtemperature chemical vapor deposition process, designated ultrahigh-vacuum/ chemical vapor deposition (UHV/CVD). The origins of the rigorous vacuum and chemical purity requirements of the process are discussed. Operating in the range of 500°C, the process has made it possible to explore the use, in silicon-based devices and atomiclength-scale structures, of a number of metastable materials in the Si:Ge system. Also discussed is associated experimental work on the fabrication of high-speed heterojunction bipolar transistors and highmobility two-dimensional hole-gas structures. © 2000 IBM.
M. Arafa, P. Fay, et al.
Electronics Letters
Michael D. Moffitt
ICCAD 2009
Leo Liberti, James Ostrowski
Journal of Global Optimization
Arun Viswanathan, Nancy Feldman, et al.
IEEE Communications Magazine