Stephen W. Bedell, Ali Khakifirooz, et al.
MRS Bulletin
Low-temperature epitaxial Si, SiGe, and SiC films were grown in a 300mm cold-wall UHV/CVD reactor on (100) silicon wafers (bulk and SOI) at temperatures ranging from 300 to 800°C using disilane, germane and methylsilane. Four key advantages of UHV/CVD over RPCVD are demonstrated: (i) higher structural quality of epitaxial Si using disilane as a precursor, (ii) highly controlled growth of ultra-thin Si down to ∼6 Å, (iii) planar growth of SiGe at ultra low temperature (< 375°C), and (iv) planar growth of germanium at temperatures of less than 350°C. ©The Electrochemical Society.
Stephen W. Bedell, Ali Khakifirooz, et al.
MRS Bulletin
Manasa Medikonda, Gangadhara R. Muthinti, et al.
JVSTB
Jeehwan Kim, Stephen W. Bedell, et al.
Applied Physics Letters
Kangguo Cheng, A. Khakifirooz, et al.
IEEE International SOI Conference 2010