Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Charge transport in 20-30-Å-thick Bi films is studied by scanning tunneling potentiometry at room temperature. Deposition at (Formula presented) K onto InP-based multilayer substrates leads to flat and continuous films that are subjected to a lateral current density of up to 8×(Formula presented) A/(Formula presented). We find that scattering at surface defects and grain boundaries gives rise to discontinuities in the local electrochemical potential. In particular, we observe dipole-shaped potential variations near small holes in the film. The influence of diffusive and ballistic transport on the formation of these dipoles is discussed. © 1996 The American Physical Society.
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Mark W. Dowley
Solid State Communications
R. Ghez, M.B. Small
JES