A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
K.N. Tu
Materials Science and Engineering: A
J.K. Gimzewski, T.A. Jung, et al.
Surface Science