Conference paper
Investigations of silicon nano-crystal floating gate memories
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MRS Spring 2000
We describe the influence of local magnetization on electron localization in magnetic semiconductors. This includes a review of the magnetic field induced insulator-metal transition in Gd3-xvxS4 (where v=vacancy) and the observation of activated transport, i.e. a 'hard' gap, in the hopping regime for the diluted magnetic semiconductor Cd1-xMnxTe. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
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Langmuir
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